Minimization of Leakage Current Through Horizontal Step Doping in SOI MOSFETs

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Provided by: International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE)
Topic: Hardware
Format: PDF
As technology scales, sub-threshold leakage currents grow exponentially and become an increasingly large component of total power dissipation. To improve performance of the MOSFETs, doping profile of channel is changed. In this paper, the authors present comparison of Uniform Doping (UD), Horizontal High Source Side doping (HHSS) & Horizontal High Drain Side doping (HHDS) and draw the various characteristics i.e. channel electric field, surface potential & sub threshold leakage current. Their results show that the horizontal high source side doping exhibit excellent properties not only higher mobility but also hot electron degradation improvement and better reliability.
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