Modelling of Characteristic Parameters for Asymmetric DHDMG MOSFET

Download Now
Provided by: WSEAS
Topic: Hardware
Format: PDF
A quasi-Fermi potential based analytical subthreshold drain current model for linear profile based DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device, without the use of any fitting parameter as is the case with drift-diffusion approach is proposed. The model uses an average doping concentration expression. A pseudo-2D analysis applying Gauss' law along the surface is used to model the sub-threshold surface potential. The same model is used to find the threshold voltage and drain current for Gaussian profile based DHDMG.
Download Now

Find By Topic