Applications of Engineering Technology and Science (AETS)
In this paper, the authors focus on different scattering effects in Silicon NanoWire (SiNW) MOSFET. The proposed system shows the impact on Gate All Around (GAA) SiNW MOSFET with precisely positioned dopants. I-V characteristics of their proposed model are compared with various other Si nanowire transistor scattering models using the MATLAB simulation tool. This paper gives the study on the current variability of the device, which shows decrease in electric current. From this it provides the guidance for future development of Si nanowire transistor.