Provided by: The International Journal of Innovative Research in Computer and Communication Engineering
Date Added: Mar 2015
In this paper, the authors investigate the mechanism of threshold voltage shifting of SRAM based on floating gates. Multi-threshold SRAM based on floating gates is represented in this paper to reduce the power consumption and leakage current. By using multi-threshold technique in SRAM based on floating gates, it consumes 66.39% less power for write '1' operation, 56.21% less power for write '0' operation, 23.35% less power for read '1' operation and 34.66% less power for read '0' operation as compared to SRAM using floating gates.