Nanosimulator for Analysis of MOSFET at Nanoscale

Provided by: International Journal of Simulation: Systems, Science & Technology (IJSSST)
Topic: Hardware
Format: PDF
At nanoscale dimensions (below 100nm) the behavioral characteristics of MOSFET change due to quantum mechanical effect and deviate from the normal equations. In this paper, the authors have proposed a simple graphical user interface model nano-simulator. This simulator is based upon modified equations to predict the curves of nanoscale MOSFETs. It has been developed to study the current-voltage characteristics and the model parameters i.e. threshold voltage, flat band voltage, mobility of nanoscale MOSFETs specifically at 90nm, 65nm, 45nm and 32nm technology nodes (or CMOS process).

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