International Journal of Simulation: Systems, Science & Technology (IJSSST)
At nanoscale dimensions (below 100nm) the behavioral characteristics of MOSFET change due to quantum mechanical effect and deviate from the normal equations. In this paper, the authors have proposed a simple graphical user interface model nano-simulator. This simulator is based upon modified equations to predict the curves of nanoscale MOSFETs. It has been developed to study the current-voltage characteristics and the model parameters i.e. threshold voltage, flat band voltage, mobility of nanoscale MOSFETs specifically at 90nm, 65nm, 45nm and 32nm technology nodes (or CMOS process).