Novel Comprehensive Analytical Probabilistic Models of the Random Variations in MOSFET's High Frequency Performances

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Provided by: WSEAS
Topic: Hardware
Format: PDF
In this paper, the authors propose the probabilistic models of the random variations in MOSFET's (Metal-Oxide Semi-conductor Field-Effect Transistor) high frequency performance defined in terms of variations in gate capacitance and transition frequency. Both random dopant fluctuation and process variation effects which are the major causes of the MOSFET's high frequency characteristic variations have been taken into account. The short channel MOSFET has been focused. The proposed models which take the form of the comprehensive analytical expressions have been derived by using the alpha-power law which is more comprehensive than the conventional square law.
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