Novel Subthreshold and Gate Leakage Reduction Techniques for 6T-SRAM Cell

Provided by: International Journal of Emerging Technology and Advanced Engineering (IJETAE)
Topic: Hardware
Format: PDF
Power has been an important issue for the present day micro-electronic circuits of SoC designs. In the entire phase of design controlling power and dealing with power dissipation is very important. There are six leakage components in a MOS transistor. About 50% of the total power consumption is through leakage components alone. Out of this 40% power dissipation is through transistors. Out of them sub-threshold leakage and gate leakage are of important concern for sub 100nm devices.

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