Optimized Magnetic Flip-Flop Combined With Flash Architecture for Memory Unit Based On Sleep Transistor

The portability in the electronic circuits is achieved by the use of battery. So its make designs for low power consumption. Normally non-volatile memories of Spin Transfer Torque Magneto resistive RAM (STTMRAM) is mainly used to designing process. Because STTMRAM have more advantages i.e. low power, infinite endurance and high speed. But STTMRAM have main disadvantage is high writable energy produced when buildup of MFF so it’s achieve high power consumption. To overcome these disadvantage of STTMRAM using the technique are swapped MOS technique. The MOS is swapped means “Exchange of transmission”.

Resource Details

Provided by:
International Research Publication House