Performance Analysis of FinFET Device at 60nm

Provided by: International Journal of Engineering Trends and Technology
Topic: Hardware
Format: PDF
In order to overcome lithography and performance gain challenges, new device structure for next generation technology have been proposed such as Silicon On Insulator (SOI) MOSFET, Double Gate (DG) MOSFET. A double gate FinFET device with High-K dielectric in 60nm is presented which provides high performance compared to normal MOSFET device in terms of reduction of leakage current. A less leakage current is reported with High-K FinFET device when HfO2 used as High-K material with a dielectric constant of 25.

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