BVICAM's International Journal of Information Technology (BIJIT)
In this paper, the authors describes the performance evaluation of different types of ring oscillator Voltage Controlled Oscillator (VCO) topologies on the basis of two characteristic parameters power and frequency in 70 nm CMOS (Complementary Metal-Oxide-Semiconductor) technology. The various topologies analyzed include current starved VCO, VCO with gates of PMOS transistor grounded, VCO with PMOS diode connected, VCO with NMOS diode connected, VCO with voltage applied to both PMOS and NMOS transistor. Simulation of different parameters of ring oscillator VCO is carried out on tanner tool Version 13. VCO topologies are evaluated on the basis of frequency and power consumption by taking lower supply voltage of 1.2 V.