Performance and Analysis of Ultra Deep Sub Micron Technology Using Complementry Metal Oxide Semiconductor Inverter

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Provided by: Academy & Industry Research Collaboration Center
Topic: Hardware
Format: PDF
CMOS technology had attained remarkable to progress and advances thus, this progress had been achieved by certain downsizing of the MOSFETs. The dimension of the MOSFETs were scaled upon by factor which has historically found to be 0.7 in very large scale integration technology, power and delay analysis have become crucial design concern. In this paper, the authors emphasize the comparative study of delay, average power and leakage power of CMOS inverter in Ultra deep submicron technology range.
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