Performance Comparison of CMOS and FINFET Based SRAM for 22nm Technology

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Provided by: World Academic Industry Research Collaboration Organization (WAIRCO)
Topic: Hardware
Format: PDF
As CMOS devices are shrinking to nanometer regime, increasing the consequences in short channel effects and variations in the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. In this paper, the authors aimed to evaluate and compare the performance of CMOS and FinFET based 6T SRAM (Static Random Access Memory) cell in 22nm technology.
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