Performance Evaluation of 6T SRAM Cell Structure and Peripheral Circuitry

Memory is the most important building block in rapid development of digital designs as half of the silicon area is used to store data value and program instructions. The power consumption and speed of SRAMs are important issue that has lead to multiple designs with the purpose of minimizing the power consumption. Bipolar SRAM is faster than that of CMOS SRAM because of small voltage swing on bit-lines also the VBE of bipolar transistor is 0.8 volts, so it requires less time to sense whatever data is stored in the memory.

Provided by: Creative Commons Topic: Hardware Date Added: Oct 2013 Format: PDF

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