Practical Nonvolatile Multilevel-Cell Phase Change Memory

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Provided by: Association for Computing Machinery
Topic: Storage
Format: PDF
Multi-Level Cell (MLC) Phase Change Memory (PCM) may provide both high capacity main memory and faster-than-Flash persistent storage. But slow growth in cell resistance with time, resistance drift, can cause transient errors in MLC-PCM. Drift errors increase with time, and prior work suggests refresh before the cell loses data. The need for refresh makes MLC-PCM volatile, taking away a key advantage. Based on the observation that most drift errors occur in a particular state in four-level-cell PCM, the authors propose to change from four levels to three levels, eliminating the most vulnerable state.
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