Probabilistic Performance of Write-Once Memory with Linear WOM Codes - Analysis and Insights

Provided by: Israel Institute of Technology
Topic: Storage
Format: PDF
The level of write-once memory cells (e.g., Flash) can only be raised individually. Bulk erasure is possible, but only a number of times (endurance) that decreases sharply with increasing cell capacity or cell-size reduction. A device's declared storage capacity and the total amount of information that can be written to it over its lifetime thus jointly characterize it. Write-Once Memory (WOM) coding permits a trade-off between these, enabling multiple writes between erasures. The guaranteed (over data) number of such writes is presently considered the important measure.

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