In this paper the authors propose a novel process variation aware SRAM architecture designed to inherently support voltage scaling. The peripheral circuitry of the SRAM is modified to selectively allow overdriving a wordline which contains weak cell(s). This architecture allows reducing the power on the entire array; however it selectively trades power for correctness when rows containing weak cells are accessed. The cell sizing is designed to assure successful read operations. This avoids flipping the content of the cells when the wordline is overdriven.