Radiations on Static Random Access Memory Cell
With increased memory capacity usually comes increased bit line parasitice capacitance. This increased bit line capacitance in turn slows down voltage sensing and makes bit line voltage swing energy expensive resulting in slower more energy hungry memories. A full description of the various methods is beyond the scope of this paper; instead, the focus is on providing primary developments that have taken place in the area of radiation effects on SRAM. In this paper, a comparison of different current mode sense amplifiers with flip flop structures using 0.35 um technology is presented with the effect of Radiation effect of 100 Krad exposures.