Robust 6T Si Tunneling Transistor SRAM Design

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Provided by: edaa
Topic: Storage
Format: PDF
SRAMs based on Tunneling Field Effect Transistors (TFETs) consume very low static power, but the unidirectional conduction inherent to TFETs calls for special care when designing the SRAM cell. In this paper, the authors make the following contributions. They perform the first study of 6T TFET SRAMs based on both n-type and p-type access transistors and determine that only inward p-type TFETs are suitable as access transistors. However, even using inward p-type access transistors, the 6T TFET SRAM achieves only the write or the read operation reliably. In order to improve the reliability of 6T TFET SRAMs, they perform the first study of four leading Write-Assist (WA) and four leading Read-Assist (RA) techniques in TFET SRAMs.
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