Provided by: Institute of Electrical & Electronic Engineers
Date Added: Jun 2014
Magnetic Tunnel Junction (MTJ) embedded in Complementary Metal - Oxide - Semiconductor (CMOS) has been considered as one of the potentially powerful solutions to build up nonvolatile memory and logic circuits. It possesses many intrinsic merits, such as high speed, instant on/off, good scalability and low-leakage power, and promises to extend the Moore's law. A critical issue in this hybrid MTJ/CMOS structure is the reliable integration of MTJ electric signals to CMOS electronics, especially for the deep sub micrometer technology nodes (e.g., 28nm) in presence of low supply voltage and serious process variations.