International Journal of Computer and Electrical Engineering (IJCEE)
The growing demand of multimedia rich applications in handled portable devices continuously driving the need for large and high speed embedded Static Random Access Memory (SRAM) to enhance the system performance. Many circuit techniques, e.g. body bias, bit charge recycling etc., have been proposed to expand design margins at low voltage operation while reducing leakage current at standby mode, but the performance is analyzed at the cost of speed and this issue is not addressed widely. Also due to continuous scaling of CMOS, the process variations also affect the performance of SRAMs.