International Journal for Technological Research in Engineering (IJTRE)
Static Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM) are used in portable devices like computers, mobile phones for holding the data. Though SRAM requires more transistors than DRAM for holding the data, DRAM has a drawback of extra circuitry that is required for refreshing DRAM to hold the data. This paper represents the stability analysis of 8T-SRAM cell by calculation of Static Noise Margin (SNM) using butterfly curve (1V, 0.6V) of voltage supply to the cell. Additionally, the authors have used N-curve metrics for better analysis of write ability with metrics, read stability with metrics which are given by I-V characteristics of SRAM cell.