SRAM cell stability analysis is typically based on Static Noise Margin (SNM) evaluation when in hold mode, although memory errors may also occur during read operations. Given that SNM varies with each cell operation, a thorough analysis of SNM in read mode is required. In this paper, the authors investigate the SNM of OAM cells during write operations. The Word-Line Voltage modulation is proposed as an alternative to improve cell stability when in this mode. They show that it is possible to improve 8T OAM cells stability during write operations while reducing current leakage, as opposed to present methods that improve cell stability at the cost of leakage increase.