Static Noise Margin Analysis of SRAM Cell for High Speed Application
In this paper, the authors present the different types of analysis such as noise, voltage, read margin and write margin of Static Random Access Memory (SRAM) cell for high-speed application. The design is based upon the 0.18 Î¼m CMOS process technology. Static Noise Margin (SNM) is the most important parameter for memory design. SNM, which affects both read and write margin, is related to the threshold voltages of the NMOS and PMOS devices of the SRAM cell that is why they have analyzed SNM with the read margin, write margin and also the threshold voltage.