Study of Short Channel Effects on FDSOI MOSFET in Nano Regime -TCAD Simulation

Provided by: IT Society of India (ITSI)
Topic: Hardware
Format: PDF
CMOS device dimensions are shrinking down due to continuous technology scaling, give rise to short channel effects which results in poor electric performances of CMOS devices and need to be addressed by Researchers in future nano-devices. In this decade, Silicon-On-Insulator (SOI) technology-based CMOS devices has been offering superiority over bulk CMOS devices in terms of speed, packaging density and radiation hardness capability. In this paper, the short channel effects of nano-scale SOI-based MOSFET have been examined.

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