Synchronous Full-Adder Based on Complementary Resistive Switching Memory Cells

Emerging Non-Volatile Memories (NVM) such as STTMRAM and OxRRAM are under intense investigation by both academia and industries. They are based on resistive switching mechanisms and promise advantageous performances in terms of access speed, power consumption and endurance (i.e. >1012), surpassing mainstream flash memories. This paper presents a non-volatile full-adder design based on complementary resistive switching memory cells and validates it through two NVM technologies: STT-MRAM and OxRRAM on 40 nm node. This architecture allows low power consumption. Thanks to the nonvolatility and 3D integration of NVM, both standby power during "Idle" state and data transfer power can be reduced.

Provided by: Institute of Electrical & Electronic Engineers Topic: Hardware Date Added: Jun 2013 Format: PDF

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