Institute of Electrical & Electronic Engineers
Emerging Non-Volatile Memories (NVM) based on Resistive Switching mechanism (RS) such as STT-MRAM, OxRRAM and CBRAM etc., are under intense R&D investigation by both academics and industries. They provide high write/read speed, low power and good endurance (e.g.,) beyond mainstream NVMs, which allow them to be embedded directly with logic units for computing purpose. This integration could increase significantly the power/die area efficiency, and then overcome definitively the power/speed bottlenecks of modern VLSIs. This paper presents firstly a theoretical investigation of synchronous NV logic gates based on RS memories (RS-NVL).