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Scaling of metal-oxide semi-conductor transistors to smaller dimensions has been a key driving force in the IC industry. This paper analysis the gate leakage current behavior of nano-scale MOSFET based on TCAD simulation. The sentaurus simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has been investigated as a function of gate voltages for a given Equivalent Oxide Thickness (EOT) of 1.0nm. It was reported in the results that inter-facial oxide thickness plays an important role in reducing the gate leakage current.