Temperature Dependence of Electron Mobility in Uniaxial Strained NMOSFETs

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Provided by: Journal of Semiconductor Technology and Science (JSTS)
Topic: Hardware
Format: PDF
As the device dimension shrinks, the enhancement of carrier mobility by strain has been investigated to improve device performance. The strain changes the electronic band structure resulting in the change of carrier mobility. While the electrostatics of strained MOSFETs has been studied, several research groups have reported the mobility characteristic in strained MOSFETs or in unstrained MOSFETs. It is also reported that the inter-valley phonon scattering is required to accurately explain the behavior of inversion layer mobility in both strained and unstrained Si MOSFETs.
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