Thermal Assisted Switching Magnetic Tunnel Junctions as FPGA Memory Elements

Provided by: Technical University of Kosice
Topic: Storage
Format: PDF
In this paper, the authors present their research and development work on new circuits and topologies based on Magnetic RAM (MRAM) for use as configuration memory elements of reconfigurable arrays. MRAM provides non volatility with cell areas and with access speeds comparable to those of SRAM and with lower process complexity than FLASH memories. The new memory cells take advantage of the Thermal Assisted Switching (TAS) writing technique to solve the drawbacks of the more common Field Induced Magnetic Switching writing technique.

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