Threshold Voltage Control Through Layer Doping of Double Gate MOSFETs

Provided by: Journal of Semiconductor Technology and Science (JSTS)
Topic: Hardware
Format: PDF
Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures-one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the center are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied.

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