Tri-Level-Cell Phase Change Memory: Toward an Efficient and Reliable Memory System

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Provided by: Association for Computing Machinery
Topic: Storage
Format: PDF
There are several emerging memory technologies looming on the horizon to compensate the physical scaling challenges of DRAM. Phase Change Memory (PCM) is one such candidate proposed for being part of the main memory in computing systems. One salient feature of PCM is its Multi-Level-Cell (MLC) property, which can be used to multiply the memory capacity at the cell level. However, due to the nature of PCM that the value written to the cell can drift over time, PCM is prone to a unique type of soft errors, posing a great challenge for their practical deployment.
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