Tunneling Field Effect Transistors for Low Power Digital Systems

MOSFET transistors are commonly used in high speed integrated circuits, yield smaller and faster more functions at lower cost. Various problems exist with scaling of MOSFET devices i.e., short channel effects, drain induced barrier lowering, velocity saturation which limits the performance of MOSFETs. Scaling limitations of MOSFET devices leads to lower ON to OFF current ratio limited by 60mV/dec sub threshold slope. A new type of device called "Tunnel FET" is used to overcome these difficulties. TFET can beat 60mV/dec sub-threshold swing of MOSFETs.

Provided by: International Journal of Innovative Technology and Exploring Engineering (IJITEE) Topic: Hardware Date Added: Apr 2013 Format: PDF

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