Provided by: MDPI AG
Date Added: Apr 2014
Ultra-Low Voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although, the operation at the Minimum Energy Point (MEP) is effective for ULP CMOS circuits, its slow operation speed often means that it is not used in many applications. The Silicon-On-Thin-Buried-oxide (SOTB) CMOS is a strong candidate for the Ultra-Low Power (ULP) electronics because of its small variability and back-bias control. Proper power and performance optimization with adaptive Vth (Voltage in thevenin theorem) control taking advantage of SOTB's features can achieve the ULP operation with acceptably high speed and low leakage.