International Journal of Engineering Trends and Technology
In this paper, the authors are going to propose the differential sensing Static Random Access Memory (SRAM) bit cells for ultra-low power and ultra-low area Schmitt trigger operation. The ST-based differential sensing SRAM bit cells address the fundamental conflicting design requirement of the read versus write operation of a conventional 6T bit cell. The ST operation gives better read-stability as well as better write-ability compared to the standard 6T bit cell. The proposed ST based circuit will be having the feedback mechanism with in itself.