Provided by: Institute of Electrical and Electronics Engineers
Date Added: Jan 2012
Due to its great scalability, fast read access, low leakage power, and non-volatility, Magnetic Random Access Memory (MRAM) appears to be a promising memory technology for on-chip cache memory in microprocessors. However, the write-to-MRAM process is relatively slow and results in high dynamic power consumption. Such inherent disadvantages of MRAM make researchers easily conclude that MRAM can only be used for low-level caches (e.g., L2 or L3 cache), where cache memories are less frequently accessed and slow write to MRAM can be more easily compensated using simple architectural techniques.