Vertically-Stacked Double-Gate Nanowire FETs With Controllable Polarity: From Devices to Regular ASICs
Vertically stacked NanoWire FETs (NWFETs) with gate-all-around structure are the natural and most advanced extension of FinFETs. At advanced technology nodes, many devices exhibit ambipolar behavior, i.e., the device shows n- and p-type characteristics simultaneously. In this paper, the authors show that, by engineering of the contacts and by constructing independent double-gate structures, the device polarity can be electrostatically programmed to be either n- or p-type. Such a device enables a compact realization of XOR-based logic functions at the cost of a denser interconnect.