Association for Computing Machinery
Spin Transfer Torque Magnetic Random Access Memory (STT MRAM) is a promising non-volatile memory due to its out-standing potential for high integration density and excellent scalability. Despite the attractive features, high write cur-rent and power is still a major challenge. As a result, the optimization of the memory for write is critical. In this paper, the authors analyze asymmetric write currents in STT MRAMs considering process variations, and identify a potential for write power reduction.