Intel’s 45nm CMOS Technology Performance Parameters in VLSI Design

The trend of CMOS technology improvement continues to be driven by the need to integrate more functions within a given silicon area. In this paper, the authors describe Intel’s 45nm technology performance parameters and relate it with other technology. They give an overview of the evolution of important parameters such as the Integrated Circuit (IC) complexity, gate length, switching delay and supply voltage with a prospective vision down to the 22 nm Complementary Metal-Oxide Semiconductor (CMOS) technology.

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