Paralleling of IGBT and MOSFET for High Power Applications

With the race towards highest efficiency, innovative topologies are more often considered for the development of new power conversion products. A device with the low ON state voltage of an IGBT and the fast switching characteristics of a MOSFET can be achieved by paralleling an IGBT with a MOSFET. However, in order to gain these advantages, the IGBT MOSFET pair must be carefully controlled. At switch on the gate of the MOSFET is direct paralleled with the IGBT gate because the MOSFET will be faster and take over the switch on losses.

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International Journal of Emerging Technology and Advanced Engineering (IJETAE)